Operation and Modeling of the MOS Transistor 3/e (絕)
- 20本以上，享 8.5折
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- 一般書籍
- ISBN：9780195170153
- 作者：Yannis Tsividis, Colin McAndrew
- 版次：3
- 年份：2011
- 出版商：Oxford University
- 頁數/規格：723頁/精裝單色
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Description
Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor--the key element of modern microelectronic chips.
Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor--the key element of modern microelectronic chips.
Features
New to This Edition
- Unified, careful treatment, starting from basic physical principles and explaining MOS transistor phenomena in a logical and systematic fashion, supplemented with extensive intuitive discussions
- In-depth coverage of the development of many important models--ranging from the simple to the sophisticated--clearly identifying the connections between them, and encompassing many aspects of modeling, including dc, small-signal, large-signal transient, quasi-static operation, non-quasi-static operation, and noise
- A completely re-written chapter on modeling for circuit simulation, covering the considerations and pitfalls in the development of models for computer-aided design
- Extensively updated bibliography
- An accompanying website includes additional details not covered in the text, as well as model computer code
New to This Edition
- Energy bands and the energy barrier viewpoint are integrated into the discussion in a smooth, simple manner
- Expanded discussion of small-dimension effects, including velocity saturation, drain-induced barrier lowering, ballistic operation, polysilicon depletion, quantum effects, gate tunneling current, and gate-induced drain leakage
- Expanded discussion of small-signal modeling, including gate and substrate current modeling and flicker noise
- New chapter on substrate nonuniformity and structural effects, discussing transversal and lateral (halo) doping nonuniformity, stress and well proximity effects, and statistical variability
Table of Contents
Chapter 1: Semiconductors, Junctions, and Mosfet Overview
Chapter 2: The Two Terminal MOS Structure
Chapter 3: The Three Terminal MOS Structure
Chapter 4: The Four - Terminal MOS Transistor
Chapter 5: Small Dimension Effects
Chapter 6: The MOS Transistor In Dynamic Operation - Large Signal Modeling
Chapter 7: Small - Signal Modeling for Low and Medium Frequencies
Chapter 8: High Frequency Small - Signals Models
Chapter 9: Substrate Nonuniformity and Structural Effects
Chapter 10: MOSFET Modeling for Circuit Simulation
Chapter 1: Semiconductors, Junctions, and Mosfet Overview
Chapter 2: The Two Terminal MOS Structure
Chapter 3: The Three Terminal MOS Structure
Chapter 4: The Four - Terminal MOS Transistor
Chapter 5: Small Dimension Effects
Chapter 6: The MOS Transistor In Dynamic Operation - Large Signal Modeling
Chapter 7: Small - Signal Modeling for Low and Medium Frequencies
Chapter 8: High Frequency Small - Signals Models
Chapter 9: Substrate Nonuniformity and Structural Effects
Chapter 10: MOSFET Modeling for Circuit Simulation
Yannis Tsividis is Charles Batchelor Professor of Electrical Engineering at Columbia University. His work with MOS transistors began in 1975 as part of his Ph.D. work at the University of California, Berkeley, in the context of the design and fabrication of the first fully-integrated MOS operational amplifier. He is a Fellow of IEEE. Among his awards are the 1984 IEEE W. R. G. Baker Prize for the best IEEE publication and the 2003 IEEE International Solid-State Circuits Conference Outstanding Paper Award.
